FES8BT(2003) 데이터 시트보기 (PDF) - Vishay Semiconductors
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FES8BT Datasheet PDF : 3 Pages
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Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curve
10
Resistive or Inductive Load
8.0
Heatsink, Case Temperature, TC
6.0
4.0 Free Air, Ambient Temperature, TA
2.0
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
150
TC = 100°C
125
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
75
50
25
0
0
50
100
150
Temperature (°C)
Fig. 3 – Typical Instantaneous
Forward Characteristics
40
Pulse width = 300µs
1% Duty Cycle
10
TJ = 125°C
TJ = 25°C
0
1
10
100
Number of Cycles at 60 HZ
Fig. 4 – Typical Reverse Leakage
Characteristics
100
TJ = 125°C
10
1.0
0.1
0.2
50 - 200V
300 - 400V
500 - 600V
0.6
1.0
1.4
1.8
Instantaneous Forward Voltage (V)
1
50 - 200V
500 - 600V
0.1
TJ = 100°C
TJ = 25°C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
1,000
Fig. 5 – Typical Junction Capacitance
TJ = 25°C
f = 1.0 MHz
Vsig = 50mVp-p
100
50 - 200V
500 - 600V
10
0.1
1
10
100
Reverse Voltage (V)
Document Number 88600
02-Apr-03
www.vishay.com
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