FX20KMJ-03-A8 데이터 시트보기 (PDF) - Renesas Electronics
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FX20KMJ-03-A8 Datasheet PDF : 7 Pages
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FX20KMJ-03
Transfer Characteristics (Typical)
–20
Tc = 25°C
VDS = –10V
–16
Pulse Test
–12
–8
–4
0
0 –2
– 4 – 6 – 8 –10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7
Tch = 25°C
5
f = 1MHz
3
VGS = 0V
2
103
Ciss
7
5
3
2
Coss
102
7
5
Crss
3
2
–3
–5–7–100 –2 –3
–5–7–101 –2 –3
–5–7–102 –2 –3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –20A
–8
–6
VDS =
–10V
– 20V
– 25V
–4
–2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
101
7
5
4
3
125°C
2
Tc = 25°C 75°C
100
7
5
4
3
2
10–1
–3
–5 –7 –100
VDS = – 5V
Pulse Test
–2 –3 –5 –7 –101 –2 –3
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
5
3
2
102
7
td(off)
tr
5
3 tf
2
101
td(on)
7
5
Tch = 25°C
3
2
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
100–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
– 50
VGS = 0V
Pulse Test
– 40
– 30
– 20
Tc = 25°C
75°C
–10
125°C
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
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