FZT853TA(2013) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FZT853TA
(Rev.:2013)

100V NPN MEDIUM POWER TRANSISTOR IN SOT223

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FZT853

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

Value

200

100

7

6

10

Unit

V

V

V

A

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Power Dissipation

Linear derating factor

(Note 5)

PD

(Note 6)

Thermal Resistance, Junction to Ambient

Thermal Resistance Junction to Lead

Operating and Storage Temperature Range

(Note 5)

(Note 6)

(Note 7)

RθJA

RθJA

RθJL

TJ, TSTG

Value

3.0

24

1.6

12.8

42

78

8.84

-55 to +150

Unit

W

mW/°C

°C/W

°C

ESD Ratings (Note 8)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

≥ 8,000

≥ 400

Unit JEDEC Class

V

3B

V

C

Notes:

5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

operating in steady state condition.

6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FZT853

Document Number DS33175 Rev. 3 - 2

2 of 7

www.diodes.com

January 2013

© Diodes Incorporated

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