VS-GA300TD60S 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-GA300TD60S
Vishay Semiconductors
VS-GA300TD60S Datasheet PDF : 8 Pages
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10 000
www.vishay.com
1000
100
10
1
1
93362_07
10
100
1000
VCE (V)
Fig. 7 - IGBT Reverse Bias SOA,
TJ = 150 °C, VGE = 15 V, Rg = 22
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
100
200
300
400
500
600
93362_08
VCES (V)
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
600
500
400
TJ = 125 °C
300
200
100
0
0
TJ = 25 °C
0.5
1.0
1.5
2.0
2.5
93362_09
VFM (V)
Fig. 9 - Typical Diode Forward Characteristics
VS-GA300TD60S
Vishay Semiconductors
160
140
120
DC
100
80
60
40
20
0
0
40
80 120 160 200 240
93362_10
IF - Continuous Forward Current (A)
Fig. 10 - Maximum DC Forward Current vs. Case Temperature
150
125
100
75
Eoff
50
25
Eon
0
0 50 100 150 200 250 300 350
93362_11
10 000
IC (A)
Fig. 11 - Typical IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
tf
1000
td(off)
td(on)
tr
100
10
0
50 100 150 200 250 300 350
93362_12
IC (A)
Fig. 12 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 360 V, Rg = 1.5 ,
VGE = 15 V, L = 500 μH
Revision: 11-Dec-17
4
Document Number: 93362
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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