GL158 데이터 시트보기 (PDF) - GTM CORPORATION
부품명
상세내역
제조사
GL158 Datasheet PDF : 2 Pages
| |||
CORPORATION ISSUED DATE :2005/09/28
REVISED DATE :2005/12/09B
GL158
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL158 is designed for general purpose switching and amplifier applications.
Features
Ԧ6 Amps continuous current, up to 20Amps peak current
ԦExcellent gain characteristic specified up to 10Amps
ԦVery low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
6
A
Collector Current (Pulse)
IC
20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25к,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
150
60
6
-
-
-
-
-
-
-
-
-
100
100
75
25
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
Max.
-
-
-
50
50
10
50
100
170
375
1.2
1.15
300
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=100uA ,IC=0
VCB=120V, IE=0
VCES=60V
VEB=6V, IC=0
IC=100mA, IB=5mA
IC=1A, IB=50mA
IC=2A, IB=50mA
IC=6A, IB=300mA
IC=6A, IB=300mA
VCE=1V, IC=6A
VCE=1V, IC=10mA
VCE=1V, IC=2A
VCE=1V, IC=5A
VCE=1V, IC=10A
VCE=10V, IC=100mA, f=50MHz
GL158
Page: 1/2
Share Link: 