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HA4600(2000) 데이터 시트보기 (PDF) - Intersil

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HA4600 Datasheet PDF : 7 Pages
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Die Characteristics
DIE DIMENSIONS:
51 mils x 36 mils x 19 mils
1290µm x 910µm x 483µm
METALLIZATION:
Type: Metal 1: AICu (1%)/TiW
Thickness: Metal 1: 6kÅ ±0.8kÅ
Type: Metal 2: AICu (1%)
Thickness: Metal 2: 16kÅ ±1.1kÅ
Metallization Mask Layout
EN
V-
V+
OUT
HA4600
SUBSTRATE POTENTIAL (Powered Up):
V-
PASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT:
53
HA4600
GND
IN
NC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
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