HE8050G-E-T9N-B 데이터 시트보기 (PDF) - Unisonic Technologies
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HE8050G-E-T9N-B Datasheet PDF : 4 Pages
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HE8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6
V
SOT-23
350
mW
Collector Dissipation
SOT-89
Pc
500
mW
TO-92/TO-92NL
1
W
Collector Current
IC
1.5
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
Cob
TEST CONDITIONS
IC=100μA,IE=0
IC=2mA,IB=0
IE=100μA,IC=0
VCB=35V,IE=0
VEB=6V,IC=0
VCE=1V,IC=5mA
VCE=1V,IC=100mA
VCE=1V,IC=800mA
IC=800mA,IB=80mA
IC=800mA,IB=80mA
VCE=1V,IC=10mA
VCE=10V,IC=50mA
VCB=10V,IE=0
f=1MHz
CLASSIFICATION of hFE2
RANK
RANGE
C
120-200
D
160-300
MIN TYP MAX UNIT
40
V
25
V
6
V
100 nA
100 nA
45 135
85 160 500
40 110
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-018,C
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