HEF4720BN 데이터 시트보기 (PDF) - Philips Electronics
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HEF4720BN Datasheet PDF : 16 Pages
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Philips Semiconductors
256-bit, 1-bit per word random access memories
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL MIN. TYP.
Write cycle
5
580
Write cycle time
10 tWC
220
15
160
Address to write
5
110
set-up time
10 tAW
50
15
50
5
370
Write pulse width
10 tWP
130
15
80
5
100
Write recovery time
10 tWR
40
15
30
5
250
Data set-up time
10 tDW
100
15
80
5
100
Data hold time
10 tDH
30
15
20
Chip select set-up
5
370
time with respect
to write pulse
10 tCSW
130
15
80
Chip select hold
5
0
time with respect
10 tCSH
0
to write pulse
15
0
Chip select lead time
5
0
over write pulse to
10 tCSL
0
prevent writing
15
0
MAX.
ns
ns
ns
ns
ns
ns
10 000 ns
10 000 ns
10 000 ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Product specification
HEF4720B
HEF4720V
January 1995
5
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