HFA16TB120 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
HFA16TB120 Datasheet PDF : 6 Pages
| |||
HFA16TB120
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
1200
IF = 16 A
-
Maximum forward voltage
VFM
IF = 32 A
See fig. 1
-
IF = 16 A, TJ = 125 °C
-
Maximum reverse
leakage current
VR = VR rated
-
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.5
3.2
2.3
0.75
375
27
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5 and 10
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
30
-
90
-
164
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 16 A
dIF/dt = 200 A/µs
VR = 200 V
-
5.8
-
8.3
-
260
-
680
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1
dI(rec)M/dt2
TJ = 25 °C
TJ = 125 °C
-
120
-
76
MAX.
-
135
245
10
15
675
1838
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
°C
-
80
K/W
0.50
-
2.0
-
0.07
-
12
-
(10)
HFA16TB120
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93074
Revision: 30-Jul-08
Share Link: 