Die Characteristics
DIE DIMENSIONS:
59 mils x 80 mils x 19 mils
1500µm x 2020µm x 483µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ 0.8kÅ
Metallization Mask Layout
HFA1109
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT:
130
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
HFA1109
NC
NC
NC
NC
-IN
+IN
V-
V+
OUT
NC
NC
NC NC
10