IRF6618TR1 데이터 시트보기 (PDF) - International Rectifier
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IRF6618TR1 Datasheet PDF : 9 Pages
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IRF6618/IRF6618TR1
1000.00
100.00
10.00
TJ = 150°C
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1.00
TJ = 25°C
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
180
10
1msec
TC = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
160
140
2.0
120
1.5
100
ID = 250µA
80
1.0
60
40
0.5
20
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4
τCτ
Ri (°C/W)
0.6784
17.299
τ4 τ4
17.566
τi (sec)
0.00086
0.57756
8.94
9.4701 106
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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