IRF840S(2016) 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명

상세내역

제조사

IRF840S
(Rev.:2016)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRF840S, SiHF840S

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T.

IAS

0.01 Ω

+

- V DD

VDS

IAS

VDS

tp

VDD

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

1200

1000

800

Top

Bottom

ID

3.6 A

5.1 A

8.0 A

600

400

200

VDD = 50 V

0

25

50

75

100

125

150

91071_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S16-0754-Rev. D, 02-May-16

5

Document Number: 91071

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: