IRFBC40L 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명

상세내역

제조사

IRFBC40L

Power MOSFET

Vishay Semiconductors 

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

D.U.T

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

RG

• dV/dt controlled by RG

+

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

- VDD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91116.

Document Number: 91116

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

7

Share Link: