IRFD9010PBF 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
IRFD9010PBF Datasheet PDF : 7 Pages
| |||
IRFD9010, SiHFD9010
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
- 10 V
8
80 μs Pulse Width
-8V
3.0
ID = - 4.7 V
2.4
6
-7V
1.8
4
VGS = - 6 V
1.2
2
-5V
-4V
0
0
5
10
15
20
25
- VGS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
80 μs Pulse Width
8
- 10 V
-8V
6
-7V
4
VGS = - 6 V
2
-5V
-4V
0
0
1
2
3
4
5
- VGS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
0.6
VGS = - 10 V
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
400
Crss = Cgd
Coss = Cds + Cgd
300
Ciss
200
Coss
100
Crss
0
1
10
100
- VGS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
80 μs Pulse Width
VDS = 2 x VGS
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0
3
4
6
8
10
- VGS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20
ID = - 4.7 A
16
12
VDS = - 40 V
8
4
For Test Circuit
See Figure 13
0
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
www.vishay.com
3
Share Link: 