IRHM7230 데이터 시트보기 (PDF) - International Rectifier

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IRHM7230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR

International Rectifier 

Radiation Characterstics

IRHM7230, IRHM8230 Devices

Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc

Fig 14. Typical Output Characteristics

Pre-Irradiation

Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

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Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

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