IRHN7250(2014) 데이터 시트보기 (PDF) - International Rectifier

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IRHN7250
(Rev.:2014)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-1)

International Rectifier 

IRHN7250, JANSR2N7269U

Pre-Irradiation

Fig 25. Maximum Drain Current Vs.

Case Temperature

VDS

VGS

RG

RD

D.U.T.

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 26a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 26b. Switching Time Waveforms

Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case

10

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