IRHN9150 데이터 시트보기 (PDF) - International Rectifier

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IRHN9150

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

Pre-Irradiation

IRHN9150, JANSR2N7422U

7000

6000

5000

4000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

3000

2000

Coss

1000

0

1

Crss

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = -22A

16

12

VDS =-80V

VDS =-50V

VDS =-20V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ = 150° C

10

TJ = 25° C

VGS = 0 V

1

0.0

1.0

2.0

3.0

4.0

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

1ms

10ms

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

1

10

DC

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

5

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