Pre-Irradiation
IRHNA9064
12000
10000
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
C oss
2000
0
1
C rss
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -48A
16
VDS =-48V
VDS = -30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50 100 150 200 250 300 350
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
TJ = 25°C
10
VGS = 0 V
1
0.0
1.0
2.0
3.0
4.0
5.0
-VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
10ms
TC = 25°C
TJ = 150 ° C
Single Pulse
1
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5