IRH3250 데이터 시트보기 (PDF) - International Rectifier

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IRH3250

200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE)

International Rectifier 

IRH7250

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Pre-Irradiation

Parameter

Min

BVDSS

Drain-to-Source Breakdown Voltage 200

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

Voltage

RDS(on)

Static Drain-to-Source On-State

—

Resistance

—

VGS(th)

Gate Threshold Voltage

2.0

gfs

Forward Transconductance

8.0

IDSS

Zero Gate Voltage Drain Current

—

—

IGSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS + LD

Gate-to-Source Leakage Forward

—

Gate-to-Source Leakage Reverse

—

Total Gate Charge

—

Gate-to-Source Charge

—

Gate-to-Drain (‘Miller’) Charge

—

Turn-On Delay Time

—

Rise Time

—

Turn-Off Delay Time

—

Fall Time

—

Total Inductance

—

Ciss

Input Capacitance

—

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

Typ Max Units

—— V

0.27 — V/°C

Test Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, ID = 1.0mA

— 0.10

— 0.11

— 4.0

——

— 25

— 250

— 100

— -100

— 170

— 30

— 70

— 33

— 140

— 140

— 140

10 —

4700 —

850 —

210 —

Ω

V

S( )

µA

nA

nC

ns

VGS = 12V, ID =16A ➃

VGS = 12V, ID = 26A

VDS = VGS, ID = 1.0mA

VDS > 15V, IDS = 16A ➃

VDS= 160V ,VGS=0V

VDS = 160V,

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS =12V, ID =26A

VDS = 100V

VDD = 100V, ID =26A

VGS =12V, RG = 2.35Ω

nH Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

VGS = 0V, VDS = 25V

pF

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS Continuous Source Current (Body Diode)

ISM Pulse Source Current (Body Diode) ➀

—

—

—

—

26

104

A

VSD Diode Forward Voltage

— — 1.4 V

trr Reverse Recovery Time

— — 820 nS

QRR Reverse Recovery Charge

— — 12 µC

Tj = 25°C, IS = 26A, VGS = 0V ➃

Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs

VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

RthJA

RthCS

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

Min Typ Max Units

— — 0.83

— — 30

— 0.12 —

°C/W

Test Conditions

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2

www.irf.com

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