IS41C16128 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS41C16128

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution 

IS41C16128

ISSI ®

AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.)

Symbol Parameter

-35

Min. Max.

tRC

Random READ or WRITE Cycle Time 60 —

tRAC

Access Time from RAS(6, 7)

— 35

tCAC

Access Time from CAS(6, 8, 15)

— 10

tAA

Access Time from Column-Address(6) — 18

tRAS

RAS Pulse Width

35 10K

tRP

RAS Precharge Time

20 —

tCAS

CAS Pulse Width(26)

6 10K

tCP

CAS Precharge Time(9, 25)

5—

tCSH

CAS Hold Time (21)

35 —

tRCD

RAS to CAS Delay Time(10, 20)

11 28

tASR

Row-Address Setup Time

0—

tRAH

Row-Address Hold Time

6—

tASC

Column-Address Setup Time(20)

0—

tCAH

Column-Address Hold Time(20)

6—

tAR

Column-Address Hold Time

(referenced to RAS)

30 —

tRAD

RAS to Column-Address Delay Time(11) 12 20

tRAL

Column-Address to RAS Lead Time

18 —

tRPC RAS to CAS Precharge Time

0—

tRSH

RAS Hold Time(27)

8—

tCLZ

CAS to Output in Low-Z(15, 29)

3—

tCRP

CAS to RAS Precharge Time(21)

5—

tOD

Output Disable Time(19, 28, 29)

3 15

tOE

Output Enable Time(15, 16)

tOEHC OE HIGH Hold Time from CAS HIGH

tOEP

OE HIGH Pulse Width

tOES

OE LOW to CAS HIGH Setup Time

— 10

10 —

10 —

5—

tRCS

Read Command Setup Time(17, 20)

0—

tRRH Read Command Hold Time

(referenced to RAS)(12)

0—

tRCH Read Command Hold Time

CAS (referenced to )(12, 17, 21)

0—

tWCH

Write Command Hold Time(17, 27)

5—

tWCR Write Command Hold Time

(referenced to RAS)(17)

30 —

tWP

Write Command Pulse Width(17)

5—

tWPZ

WE Pulse Widths to Disable Outputs

10 —

tRWL

Write Command to RAS Lead Time(17)

8—

tCWL

Write Command to CAS Lead Time(17, 21) 8 —

tWCS

Write Command Setup Time(14, 17, 20)

0—

tDHR

Data-in Hold Time (referenced to RAS) 30 —

-40

Min. Max.

75 —

— 40

— 12

— 20

40 10K

25 —

6 10K

5—

40 —

17 28

0—

6—

0—

6—

30 —

12 20

20 —

0—

12 —

3—

5—

3 15

— 10

10 —

10 —

5—

0—

0—

0—

6—

30 —

6—

10 —

12 —

12 —

0—

30 —

-45

Min. Max.

80 —

— 45

— 13

— 22

45 10K

25 —

7 10K

7—

45 —

18 32

0—

7—

0—

7—

35 —

13 22

22 —

0—

13 —

3—

5—

3 15

— 12

10 —

10 —

5—

0—

0—

0—

7—

35 —

7—

10 —

13 —

13 —

0—

35 —

-50

Min. Max.

90 —

— 50

— 14

— 25

50 10K

30 —

8 10K

8—

50 —

19 36

0—

8—

0—

8—

40 —

14 25

25 —

0—

14 —

3—

5—

3 15

— 15

10 —

10 —

5—

0—

0—

0—

8—

40 —

8—

10 —

14 —

14 —

0—

40 —

-60

Min. Max. Units

110 — ns

— 60 ns

— 15 ns

— 30 ns

60 10K ns

40 — ns

10 10K ns

10 — ns

60 — ns

20 45 ns

0 — ns

10 — ns

0 — ns

10 — ns

40 — ns

15 30 ns

30 — ns

0 — ns

15 — ns

3 — ns

5 — ns

3 15 ns

— 15 ns

10 — ns

10 — ns

5 — ns

0 — ns

0 — ns

0 — ns

10 — ns

50 — ns

10 — ns

10 — ns

15 — ns

15 — ns

0 — ns

40 — ns

Integrated Silicon Solution, Inc.

7

PRELIMINARY DR002-1D

08/20/98

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