IS75V16F128GS32
ISSI ®
FLASH MEMORY COMMAND DEFINITIONS - FLASH 1 or FLASH 2
Command
Sequence
Bus
Write
Cycle
Req'd
First Bus
Cycle
Addr. Data
Second Bus
Write Cycle
Addr. Data
Third Bus
Write Cycle
Addr. Data
Fourth Bus
Read/Write
Addr. Data
Fifth Bus
Cycle
Addr. Data
Sixth Bus
Cycle
Addr. Data
Read / Reset (1)
1 XXXh F0h
—
—
—
—
—
—
—
—
—
—
Read / Reset (1)
Autoselect
3
555h AAh 2AAh 55h
555h F0h
RA
RD
—
—
(BA)
3
555h AAh 2AAh 55h
555h 90h
—
—
—
—
—
—
—
—
Program
4
555h AAh 2AAh 55h 555h A0h
PA
PD
—
—
—
—
Program Suspend
1
BA
B0h
—
—
—
—
—
—
—
—
—
—
Program Resume
Chip Erase
Sector Erase
1
BA
30h —
—
—
—
—
—
—
—
—
—
6
555h AAh 2AAh
55h
555h
80h 555h
AAh 2AAh 55h
555h 10h
—
—
—
—
—
—
—
6
555h AAh 2AAh 55h
555h 80h 555h
AAh 2AAh 55h
SA 30h
Erase Suspend
1
BA B0h —
—
—
—
—
—
—
—
—
—
Erase Resume
Extended Sector
Group Protection
(3)
Set to Fast
Mode (2)
Fast Program (2)
Reset from Fast
Mode (2)
Query (4)
Hi-ROM
Entry
Hi-ROM
Program (5)
Hi-ROM
Exit (5)
1
BA
30h —
—
—
—
—
—
4 XXXh 60h SGA 60h SGA 40h SGA SD
—
—
—
—
—
—
—
—
3
555h AAh 2AAh 55h 555h 20h
—
—
—
—
—
—
2 XXXh A0h PA
PD
—
—
—
—
—
—
—
—
2
BA
90h
XXXh
(6)
F0H
—
—
—
—
—
—
—
—
1
(BA)
55h
98h
—
—
—
—
—
—
—
—
—
—
3
555h AAh 2AAh 55h 555h 88h
—
—
—
—
—
—
4
555h
AAh 2AAh 55h
555h
A0h (HRA)
PA
PD
—
—
4
555h AAh 2AAh
(HRBA)
55h 555h
90h
XXXh
00h
—
—
—
—
—
—
Notes:
1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid during Fast Mode.
3. This command is valid while RESET = VID
4. The valid address is A6 to A0.
5. This command is valid during Hi-ROM mode.
6. The data “00h” is also acceptable.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
19
PRELIMINARY INFORMATION Rev. 00D
03/24/03