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5962R0922502VXC 데이터 시트보기 (PDF) - Intersil

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5962R0922502VXC Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
ISL70001SEH
Die Characteristics
Die Dimensions
5720µm x 5830µm (225.2 mils x 229.5 mils)
Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil)
Interface Materials
GLASSIVATION
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
TOP METALLIZATION
Type: AlCu (0.5%)
Thickness: 2.7µm ±0.4µm
SUBSTRATE
Type: Silicon
Isolation: Junction
BACKSIDE FINISH
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
PGND
ADDITIONAL INFORMATION
Worst Case Current Density
< 2 x 105 A/cm2
Transistor Count
25030
Layout Characteristics
Step and Repeat
5720µm x 5830µm
Connect PGND to PGNDx
Metallization Mask Layout
ISL70001SEH
SYNC PVIN1
LX1
PGND1 PGND2
LX2
PVIN2
PVIN3
M/S
ZAP
TDI
TDO
PGOOD
SS
LX3
PGND3
PGND4
DVDD
LX4
PVIN4
DGND
PGND
AGND
PVIN5
LX5
AVDD REF FB EN PORSEL PVIN6
LX6
PGND6
PGND5
15
FN7956.0
November 30, 2011

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