Pre-Irradiation
IRHF9230
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
1600
Coss = Cds + Cgd
Ciss
1200
800
400
0
1
C oss
C rss
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -4.0A
16
VDS =-160V
VDS =-100V
VDS =-40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.5
VGS = 0 V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150 °C
Single Pulse
0.1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5