KSB601 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSB601

PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

-5

IB = -10mA

IB = -6mA

IB = -4mA

-4

-3

-2

-1

IB = -2mA IB = -1.5mA

IB = -1.0mA

IB = -0.8mA

IB = -0.6mA

IB = -0.4mA

-0

-1

-2

-3

-4

-5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

IC = 1000 IB

VBE(sat)

-1

VCE(sat)

-0.1

-0.1

-1

-10

-100

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-16

-14

-12

-10

-8

-6

-4

-2

-0

-20

-40

-60

-80

-100 -120 -140 -160

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Areas

©2000 Fairchild Semiconductor International

10000

1000

VCE = -2V

100

10

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

-10

-1

100ms

10ms

LDimisitseipdation

100us 50us

-0.1

-0.01

-0.001

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

160

140

120

100

80

60

40

DissipationsL/bimLitiemdited

20

0

25

50

75

100

125

150

175

200

TC[oC], CASE TEMPERATURE

Figure 6. Derating Curve of Safe Operating Areas

Rev. A, February 2000

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