Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13005W
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 75W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
VEBO——Emitter-Base Voltage……………………………… 9V
IC——Collector Curren(t DC)………………………………… 4A
IC——Collector Curren(t Pulse)……………………………… 8A
IB——Base Current……………………………………………2A
█ 电参数(Ta=25℃)
Symbol
Characteristics
Min Typ Max
BVCEO Collector-Emitter Sustaining Voltage 400
IEBO Emitter-Base Cut-off Current
1
HFE DC Current Gain
10
40
8
40
VCE(sat) Collector- Emitter Saturation Voltage
0.5
0.6
1
VBE(sat) Base- Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain-Bandwidth Product
tON Turn On Time
tS Storage Time
tF Fall Time
1.2
1.6
65
4
0.8
4
0.9
TO-263(D2PAK)
1―Base,B
2―Collector,C
3―Emitter, E
Unit
V
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
Test Conditions
IC=10mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
VCC=125V,
IC=2A,
IB1=-IB2=0.4A
hFE classification:H1(10--16) H2(14--21) H3(19--26) H4(24--31) H5(29--40)