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LTC4219IDHC-12-PBF 데이터 시트보기 (PDF) - Linear Technology

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LTC4219IDHC-12-PBF
Linear
Linear Technology 
LTC4219IDHC-12-PBF Datasheet PDF : 18 Pages
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LTC4219
Electrical Characteristics The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VDD = 12V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
DC Characteristics
VDD
IDD
VDD(UVL)
VOUT(PGTH)
Input Supply Range
Input Supply Current
Input Supply Undervoltage Lockout
Output Power Good Threshold
DVOUT(PGHYST) Output Power Good Hysteresis
MOSFET On, No Load
VDD Rising
LTC4219-12, VOUT Rising
LTC4219-5, VOUT Rising
LTC4219-12
l 2.9
15
V
l
1.6
3
mA
l 2.65 2.73 2.85
V
l 10.2 10.5 10.8
V
l 4.2
4.35
4.5
V
l 127
170
213
mV
LTC4219-5
l 53
71
89
mV
IOUT
dVGATE /dt
RON
ILIM(TH)
Inputs
OUT Leakage Current
GATE Pin Turn-On Ramp Rate
MOSFET + Sense Resistor On Resistance
Current Limit Threshold
VOUT = VGATE = 0V, VDD = 15V
VOUT = VGATE = 12V, LTC4219-12
VOUT = VGATE = 5V, LTC4219-5
VFB = 1.23V
VFB = 0V
VFB = 1.23V, RSET = 20kΩ
l
0
±150
µA
l 50
70
90
µA
l 26
36
46.5
µA
l 0.15
0.3
0.55
V/ms
l 15
33
50
mW
l 5.0
5.6
6.1
A
l 1.2
1.5
1.8
A
l 2.6
2.9
3.3
A
IIN
EN1, EN2 Input Current
RFB
FB Input Resistance
VPIN = 1.2V
LTC4219-12
LTC4219-5
l
0
±1
µA
l 13
18
23
l 20
29
37
VTH
DVEN(HYST)
DVFB(HYST)
RISET
EN1, EN2, FB Threshold Voltage
EN1, EN2 Hysteresis
FB Power Good Hysteresis
ISET Internal Resistor
VPIN Rising
l 1.21 1.235 1.26
V
l 50
80
110
mV
l 10
20
30
mV
l 19
20
21
kW
For more information www.linear.com/LTC4219
4219fd
3

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