LX5561LL 데이터 시트보기 (PDF) - Microsemi Corporation
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LX5561LL Datasheet PDF : 8 Pages
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LX5561
TM
® InGaAs – E-Mode pHEMT Low Noise Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Test conditions: VDD = 3.3V, IDD = 10.5mA, TA = +25°C (Room Temperature)
Parameter
Application Frequency Range
Small-Signal Gain
Noise Figure
Input 3rd Order Intercept Point
Input P1dB
Input Return Loss
Output Return Loss
Supply Voltage
Supply Current
Symbol
Test Conditions
f
S21
NF
IIP3
IP1dB
S11
S22
VDD
IDD
Freq. 1 = 2.412GHz, Freq. 2 = 2.432GHz
Freq. = 2.45GHz
LX5561
Min Typ Max
2.4
2.5
13.0
1.5 1.8
6.5
2.5
12
12
3.3
10.5
Units
GHz
dB
dB
dBm
dBm
dB
dB
V
mA
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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