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M40SZ100WMH6E(2010) 데이터 시트보기 (PDF) - STMicroelectronics

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M40SZ100WMH6E
(Rev.:2010)
ST-Microelectronics
STMicroelectronics 
M40SZ100WMH6E Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M40SZ100Y
M40SZ100W
5 V or 3 V NVRAM supervisor for LPSRAM
Features
Convert low power SRAMs into NVRAMs
5 V or 3 V operating voltage
Precision power monitoring and power
switching circuitry
Automatic write-protection when VCC is out-of-
tolerance
Choice of supply voltages and power-fail
deselect voltages:
– M40SZ100Y: VCC = 4.5 to 5.5 V;
4.20 V VPFD 4.50 V
(contact local ST sales office for
availability)
– M40SZ100W: VCC = 2.7 to 3.6 V;
2.55 V VPFD 2.70 V
Reset output (RST) for power on reset
1.25 V reference (for PFI/PFO)
Less than 10 ns chip enable access
propagation delay (at 5 V)
Optional packaging includes a 28-lead SOIC
and SNAPHAT® top (to be ordered separately)
28-lead SOIC package provides direct
connection for a SNAPHAT top which contains
the battery (contact local ST sales office for
availability)
Battery low pin (BL)
RoHS compliant
– Lead-free second level interconnect
16
1
SO16 (MQ)
SNAPHAT (SH) battery
28
1
SOH28 (MH)
October 2010
Doc ID 7528 Rev 3
1/24
www.st.com
1

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