MAC8MG 데이터 시트보기 (PDF) - ON Semiconductor
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MAC8MG Datasheet PDF : 6 Pages
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MAC8D, MAC8M, MAC8N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
IDRM,
IRRM
−
− 0.01
−
−
2.0
Peak On-State Voltage (Note 2), (ITM = ± 11 A Peak)
Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VTM
−
1.2 1.6
IGT
5.0
13
35
5.0
16
35
5.0
18
35
Holding Current, (VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 24 V, IG = 35 mA), MT2(+), G(+); MT2(−), G(−)
MT2(+), G(−)
IH
−
20
40
IL
−
20
50
−
30
80
Gate Trigger Voltage (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5 0.69 1.5
0.5 0.77 1.5
0.5 0.72 1.5
Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TJ = 125°C)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
VGD
0.2
−
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current See Figure 10.(VD = 400 V, ITM = 4.4 A,
Commutating dv/dt = 18 V/ms,Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 mF
LL = 40 mH
(di/dt)c
6.5
−
−
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
dv/dt
250
−
−
Unit
mA
V
mA
mA
mA
V
V
A/ms
V/ms
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