DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MB88141PFV 데이터 시트보기 (PDF) - Fujitsu

부품명
상세내역
제조사
MB88141PFV Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
MB88141
s ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Rating
Unit
Min.
Max.
VCC
0.3
+7.0*
V
Supply voltage
Input voltage
VDD
0.3
+7.0*
V
VSS
With reference to GND,
at Ta = +25 °C
0.3
+7.0*
V
VIN
0.3
VCC + 0.3
V
Output voltage
VOUT
0.3
VCC + 0.3
V
Power consumption
PD
250
mW
Operating temperature
Ta
20
+85
°C
Storage temperature
Tstg
55
+120
°C
*: VCC VDD1 VSS1, VCC VDD2 VSS2
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Conditions
Value
Unit
Min. Typ. Max.
Supply voltage 1
VCC
4.5
5.0
5.5
V
GND
0
V
Supply voltage 2
VDD1
VSS1
VCC VDD1 > VSS1
VDD1 VSS1 2.0 V
2.0
VCC
V
0
3.5
V
Supply voltage 3
VDD2
VSS2
VCC VDD2 > VSS2
VDD2 VSS2 2.0 V
2.0
VCC
V
0
3.5
V
Analog output current
IAL
Source current
IAH
Sink current
0
1.0
mA
0
1.0
mA
Oscillator limit output capacitance COL
1.0
µF
Digital data setting range
#00
#FF
Operating temperature
Ta
20
+85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]