MC33035, NCV33035
ELECTRICAL CHARACTERISTICS (continued) (VCC = VC = 20 V, RT = 4.7 k, CT = 10 nF, TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ERROR AMPLIFIER
Output Voltage Swing
High State (RL = 15 k to Gnd)
Low State (RL = 15 k to Vref)
OSCILLATOR SECTION
Oscillator Frequency
Frequency Change with Voltage (VCC = 10 to 30 V)
Sawtooth Peak Voltage
Sawtooth Valley Voltage
LOGIC INPUTS
Input Threshold Voltage (Pins 3, 4, 5, 6, 7, 22, 23)
High State
Low State
Sensor Inputs (Pins 4, 5, 6)
High State Input Current (VIH = 5.0 V)
Low State Input Current (VIL = 0 V)
Forward/Reverse, 60°/120° Select (Pins 3, 22, 23)
High State Input Current (VIH = 5.0 V)
Low State Input Current (VIL = 0 V)
Output Enable
High State Input Current (VIH = 5.0 V)
Low State Input Current (VIL = 0 V)
VOH
4.6
VOL
−
fOSC
22
ΔfOSC/ΔV
−
VOSC(P)
−
VOSC(V)
1.2
VIH
3.0
VIL
−
IIH
−150
IIL
− 600
IIH
−75
IIL
− 300
IIH
− 60
IIL
− 60
5.3
0.5
25
0.01
4.1
1.5
2.2
1.7
−70
− 337
− 36
−175
− 29
− 29
V
−
1.0
28
kHz
5.0
%
4.5
V
−
V
V
−
0.8
μA
− 20
−150
μA
−10
−75
μA
−10
−10
CURRENT−LIMIT COMPARATOR
Threshold Voltage
Input Common Mode Voltage Range
Input Bias Current
OUTPUTS AND POWER SECTIONS
Top Drive Output Sink Saturation (Isink = 25 mA)
Top Drive Output Off−State Leakage (VCE = 30 V)
Top Drive Output Switching Time (CL = 47 pF, RL = 1.0 k)
Rise Time
Fall Time
Bottom Drive Output Voltage
High State (VCC = 20 V, VC = 30 V, Isource = 50 mA)
Low State (VCC = 20 V, VC = 30 V, Isink = 50 mA)
Bottom Drive Output Switching Time (CL = 1000 pF)
Rise Time
Fall Time
Fault Output Sink Saturation (Isink = 16 mA)
Fault Output Off−State Leakage (VCE = 20 V)
Under Voltage Lockout
Drive Output Enabled (VCC or VC Increasing)
Hysteresis
Power Supply Current
Pin 17 (VCC = VC = 20 V)
Pin 17 (VCC = 20 V, VC = 30 V)
Pin 18 (VCC = VC = 20 V)
Pin 18 (VCC = 20 V, VC = 30 V)
Vth
85
VICR
−
IIB
−
101
3.0
− 0.9
115
mV
−
V
− 5.0
μA
VCE(sat)
−
IDRV(leak)
−
0.5
1.5
V
0.06
100
μA
ns
tr
−
107
300
tf
−
26
300
V
VOH
(VCC − 2.0) (VCC −1.1)
−
VOL
−
1.5
2.0
tr
−
tf
−
VCE(sat)
−
IFLT(leak)
−
ns
38
200
30
200
225
500
mV
1.0
100
μA
Vth(on)
8.2
VH
0.1
ICC
−
−
IC
−
−
V
8.9
10
0.2
0.3
mA
12
16
14
20
3.5
6.0
5.0
10
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