Freescale Semiconductor, Inc.
DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CONTROL INTERFACE AND POWER OUTPUT TIMING
CBOOT Charge Blanking Time (Note 11)
t ON
–
20
–
µs
Output Rising Slew Rate (Note 12)
SRR
V/µs
VPWR = 14 V
–
25
–
CGATE = 6.8 nF, from 10% to 90% of VOUT, SR Capacitor = 4.7 nF
–
–
–
Output Falling Slew Rate (Note 12)
SRF
VPWR = 14 V
CGATE = 6.8 nF, from 90% to 10% of VOUT, SR Capacitor = 4.7 nF
V/µs
–
25
–
–
–
–
Output Turn-ON Delay Time (Note 13)
Output Turn-OFF Delay Time
Input Switching Frequency (Note 14)
t DLY(ON)
–
t DLY(OFF)
–
f PWM
–
200
–
ns
400
–
ns
–
60
kHz
Notes
11. Refer to the paragraph entitled Sleep Mode on page 19.
12. Parameter is guaranteed by process monitoring but is not production tested.
13. Turn-ON delay time measured from rising edge of INHS that turns the output ON to VOUT = 0.5 V with RL= 5.0 Ω resistive load.
14. Turn-OFF delay time measured from falling edge of INHS that turns the output OFF to VOUT = VPWR -0.5 V with RL= 5.0 Ω resistive load.
33981
8
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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