Data Sheet
January 2002
RF1K49156
6.3A, 30V, 0.030 Ohm, Logic Level, Single
N-Channel LittleFET™ Power MOSFET
This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49156.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49156
MS-012AA
RF1K49156
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 96 to the part number, i.e., RF1K4915696.
Features
• 6.3A, 30V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC (1)
DRAIN (8)
SOURCE (2)
DRAIN (7)
SOURCE (3)
GATE (4)
DRAIN (6)
DRAIN (5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
©2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B