Data Sheet
RF1K49157
August 1999 File Number 4012.5
6.3A, 30V, 0.030 Ohm, Single N-Channel
LittleFET™ Power MOSFET
This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49157.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49157
MS-012AA
RF1K49157
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 96 to the part number, i.e., RF1K4915796.
Features
• 6.3A, 30V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC (1)
DRAIN (8)
SOURCE (2)
DRAIN (7)
SOURCE (3)
GATE (4)
DRAIN (6)
DRAIN (5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
8-122
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999