BSS51 데이터 시트보기 (PDF) - Philips Electronics
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BSS51 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BSS50; BSS51; BSS52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSS50
BSS51
BSS52
collector-emitter voltage
BSS50
BSS51
BSS52
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
−
60
V
−
80
V
−
90
V
−
45
V
−
60
V
−
80
V
−
5
V
−
1
A
−
2
A
−
100
mA
−
0.8
W
−
5
W
−65
+150
°C
−
200
°C
−65
+150
°C
VALUE
220
35
UNIT
K/W
K/W
1997 Sep 03
3
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