BSS52 데이터 시트보기 (PDF) - Philips Electronics
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BSS52 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BSS50; BSS51; BSS52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICES
IEBO
hFE
VCEsat
VCEsat
VCEsat
VBEsat
VBEsat
VBEon
fT
collector cut-off current
BSS50
VBE = 0; VCE = 45 V
BSS51
VBE = 0; VCE = 60 V
BSS52
VBE = 0; VCE = 80 V
emitter cut-off current
IC = 0; VEB = 4 V
DC current gain
VCE = 10 V
IC = 150 mA
IC = 500 mA
collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA; Tj = 200 °C
collector-emitter saturation voltage
BSS51
IC = 1 A; IB = 1 mA
IC = 1 A; IB = 1 mA; Tj = 200 °C
collector-emitter saturation voltage
BSS50; BSS52
base-emitter saturation voltage
base-emitter saturation voltage
IC = 1 A; IB = 4 mA
IC = 1 A; IB = 4 mA; Tj = 200 °C
IC = 500 mA; IB = 0.5 mA
BSS51
BSS50; BSS52
base-emitter on-state voltage
transition frequency
IC = 1 A; IB = 1 mA
IC = 1 A; IB = 4 mA
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 500 mA; VCE = 5 V; f = 100 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
MIN. TYP. MAX. UNIT
−
−
50 nA
−
−
50 nA
−
−
50 nA
−
−
50 nA
1000 −
2000 −
−
−
−
−
−
−
1.3 V
1.3 V
−
−
1.6 V
−
−
2.3 V
−
−
1.6 V
−
−
1.6 V
−
−
1.9 V
−
−
2.2 V
−
−
2.2 V
1.3 −
1.65 V
1.4 −
1.75 V
−
200 −
MHz
−
0.5 −
µs
−
0.4 −
µs
−
1.3 −
µs
−
1.5 −
µs
1997 Sep 03
4
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