MJ425 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJ425

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ425

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

400

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB=B 0.1A

ICEO

Collector Cutoff Current

VCE=400V; VEB(off)=1.5V

ICEX

Collector Cutoff Current

VCE=700V; VEB(off)=1.5V

IEBO

Emitter Cutoff current

VEB=6V; IC= 0

hFE-1

DC Current Gain

IC= 1A; VCE=5V

30

hFE-2

DC Current Gain

IC= 2.5A; VCE=5V

10

fT

Current-Gain—Bandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz

2.5

V

0.8

V

1.2

V

0.25 mA

0.5 mA

5.0 mA

90

MHz

isc Website：www.iscsemi.cn

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