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MJE371

Plastic Medium−Power PNP Silicon Transistor

ON Semiconductor 

MJE371

Plastic Medium−Power

PNP Silicon Transistor

This device is designed for use in general−purpose amplifier and

switching circuits. Recommended for use in 5 to 20 Watt audio

amplifiers utilizing complementary symmetry circuitry.

Features

• DC Current Gain − hFE = 40 (Min) @ IC

= 1.0 Adc

• MJE371 is Complementary to NPN MJE521

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous

− Peak

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current

− Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

Symbol

VCEO

VCB

VEB

IC

IB

PD

TJ, Tstg

Value

Unit

40

Vdc

40

Vdc

4.0

Vdc

4.0

Adc

8.0

2.0

Adc

40

W

320

mW/_C

–65 to +150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Max

Thermal Resistance, Junction−to−Case

qJC

3.12

Unit

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol Min Max

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage VCEO(sus) 40 −

(IC = 100 mAdc, IB = 0) (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 40 Vdc, IE = 0)

ICBO

− 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VEB = 4.0 Vdc, IC = 0)

IEBO

− 100

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

40 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Unit

Vdc

mAdc

mAdc

−

http://onsemi.com

4 AMPERES

POWER TRANSISTOR

PNP SILICON

40 VOLTS, 40 WATTS

321

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JE371G

Y

= Year

WW = Work Week

JE371 = Device Code

G

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

MJE371

MJE371G

TO−225

TO−225

(Pb−Free)

500 Units/Box

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

1

February, 2006 − Rev. 6

Publication Order Number:

MJE371/D

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