MP03HBN190-12 데이터 시트보기 (PDF) - Dynex Semiconductor
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MP03HBN190-12 Datasheet PDF : 10 Pages
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MP03 XXX 190 Series
CURVES
2500
2000
1500
1000
Tj = 125˚C
500
00
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VT - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
50
P
10
GM = 16W
Tj = 25˚C Tj = -40˚C
Tj = 125˚C
1
0.1
0.01
0.1
1
10
Gate current IG - (A)
Fig. 2 Gate trigger characteristics
4/10
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