s MSM10S0000 s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
DC Characteristics (VDD = 2.7 to 3.6 V, VSS = 0 V, Tj = -40° to +85°C)
Parameter
Symbol
Condition
Rated Value
Min.
Typ. [1]
Max.
Unit
“H” level input voltage
VIH
“L” level input voltage
VIL
TTL level Schmitt Trigger input Vt+
threshold voltage
Vt-
∆VT
CMOS level Schmitt Trigger Vt+
input threshold voltage
Vt-
∆VT
“H” level output voltage
VOH
“L” level output voltage
VOL
“H” level input current
IIH
“L” level input current
IIL
3-state output leakage current IOZH
IOZL
Stand-by current
IDDS
TTL input
CMOS input
TTL input
CMOS input
–
–
Vt+ - Vt-
–
–
Vt+ - Vt-
IOH = 1, 2, 4, 6, 8, 12 mA
IOL = 1, 2, 4, 6, 8 mA
IOL = 12 or 24 mA
VIH = VDD
VIH = VDD (50 kΩ pull down)
VIL = VSS
VIL = VSS (50 kΩ pull up)
VIL = VSS (3 kΩ pull up)
VOH = VDD
VOL = VSS
VOL = VSS (50 kΩ pull up)
VOL = VSS (3 kΩ pull up)
Output open
VIH = VDD, VIL = VSS
1.8
–
VDD+0.5
V
0.7xVDD
–
VDD+0.5
V
-0.5
–
0.5
V
-0.5
–
0.3xVDD
V
–
1.3
1.8
V
0.5
1
–
V
0.1
0.3
–
V
–
2
0.76xVDD
V
0.24xVDD
1
–
V
0.1xVDD
1
–
V
2.2
–
–
V
–
–
0.3
V
–
–
0.4
V
–
0.01
1
µA
5
35
120
µA
-1
-0.01
–
µA
-120
-35
-5
µA
-2
-.55
-.120
mA
–
0.01
1
µA
-1
-0.01
–
µA
-120
-35
-5
µA
-2
-.55
-.12
mA
–
0.1
10
µA
1. Typical condition is VDD = 3.0 V and Tj = 25°C. Typical process.
4
Oki Semiconductor