MTD9N10E 데이터 시트보기 (PDF) - ON Semiconductor

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MTD9N10E

Power MOSFET 9 Amps, 100 Volts

ON Semiconductor 

MTD9N10E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

100

–

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)

(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

–

–

IGSS

–

VGS(th)

2.0

–

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 4.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 9.0 Adc)

(ID = 4.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 8.0 Vdc, ID = 4.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 50 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 80 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 1.)

(IS = 9.0 Adc, VGS = 0 Vdc)

(IS = 9.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

Reverse Recovery Time

(See Figure 14)

Reverse Recovery Stored

Charge

(IS = 9.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

RDS(on)

–

VDS(on)

–

–

gFS

4.0

Ciss

–

Coss

–

Crss

–

td(on)

–

tr

–

td(off)

–

tf

–

QT

–

Q1

–

Q2

–

Q3

–

VSD

–

–

trr

–

ta

–

tb

–

QRR

–

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

–

Internal Source Inductance

LS

–

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

–

–

Vdc

103

–

mV/°C

µAdc

–

10

–

100

–

100

nAdc

–

4.0

Vdc

6.0

–

mV/°C

0.17

0.25

Ohm

Vdc

–

2.43

–

2.40

–

–

mhos

610

1200

pF

176

400

14

30

8.8

20

ns

28

60

16

30

4.8

10

14

21

nC

5.2

–

3.2

–

6.6

–

Vdc

0.98

1.8

0.9

–

91

–

ns

71

–

20

–

0.4

–

µC

4.5

–

nH

7.5

–

nH

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