MTY10N100E 데이터 시트보기 (PDF) - Motorola => Freescale

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MTY10N100E

TMOS E-FET Power Eield Effect Transistor

Motorola => Freescale 

MTY10N100E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

(VGS = 0, ID = 3.0 mA)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 800 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 10 Adc)

(ID = 5.0 Adc, TJ = 125°C)

Forward Transconductance (VDS ≥ 8.0 Vdc, ID = 5.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 500 Vdc, ID = 10 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 400 Vdc, ID = 10 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 10 Adc, VGS = 0 Vdc)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Reverse Recovery Time

(See Figure 14)

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

trr

ta

tb

QRR

LD

LS

Min

1000

1000

—

—

—

—

—

2.0

—

—

—

—

8.0

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

1.254

—

—

—

—

3.0

7.0

1.10

11

—

10

3500

264

52

29

57

118

70

100

18.4

33

36.7

0.885

0.8

885

220

667

8.0

3.5

4.5

7.5

Max

Unit

—

—

—

5.0

10

100

±100

Vdc

V/°C

µAdc

nAdc

4.0

Vdc

—

mV/°C

1.3

Ohm

Vdc

15

15.3

—

mhos

5600

pF

530

90

60

ns

120

240

140

120

nC

—

—

—

Vdc

1.1

—

—

ns

—

—

—

µC

nH

—

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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