DTA123JM3T5G(2012) 데이터 시트보기 (PDF) - ON Semiconductor

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DTA123JM3T5G
(Rev.:2012)

Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 47 kΩ

ON Semiconductor 

MUN5135, DTA123JE, DTA123JM3, NSBA123JF3

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

ON CHARACTERISTICS

DC Current Gain (Note 5)

hFE

(IC = 5.0 mA, VCE = 10 V)

Collector *Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

Input Voltage (on)

(VCE = 0.2 V, IC = 5.0 mA)

Vi(on)

Output Voltage (on)

VOL

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

Output Voltage (off)

VOH

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

Input Resistor

R1

Resistor Ratio

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.

R1/R2

Min

Typ

Max Unit

nAdc

−

−

100

nAdc

−

−

500

mAdc

−

−

0.2

50

−

Vdc

−

50

−

Vdc

−

80

140

−

Vdc

−

−

0.25

Vdc

−

0.6

−

Vdc

−

0.8

−

Vdc

−

−

0.2

4.9

−

Vdc

−

1.5

2.2

2.9

kW

0.038 0.047 0.056

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