NCP1611ADR2G(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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NCP1611ADR2G Datasheet PDF : 28 Pages
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NCP1611
TYPICAL ELECTRICAL CHARACTERISTICS TABLE (Conditions: VCC = 15 V, TJ from −40°C to +125°C, unless otherwise
specified)
Symbol
Rating
Min
Typ
Max
Unit
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
TLEB,OCP
Over−Current Protection Leading Edge Blanking Time (guaranteed by design) 100
200
350
ns
TLEB,OVS
“Overstress” Leading Edge Blanking Time (guaranteed by design)
50
100
170
ns
TOCP
Over−Current Protection Delay from VCS/ZCD > VCS(th) to DRV low (dVCS/ZCD /
dt = 10 V/ms)
−
40
200
ns
VZCD(th)H
VZCD(th)L
VZCD(hyst)
RZCD/CS
VCL(pos)
IZCD(bias)
IZCD(bias)
TZCD
TSYNC
TWDG
TWDG(OS)
TTMO
IZCD(gnd)
STATIC OVP
Zero Current Detection, VCS/ZCD rising
Zero Current Detection, VCS/ZCD falling
Hysteresis of the Zero Current Detection Comparator
VZCD(th)H over VCS(th) Ratio
CS/ZCD Positive Clamp @ ICS/ZCD = 5 mA
CS/ZCD Pin Bias Current, VCS/ZCD = 0.75 V
CS/ZCD Pin Bias Current, VCS/ZCD = 0.25 V
(VCS/ZCD < VZCD(th)L) to (DRV high)
Minimum ZCD Pulse Width
Watch Dog Timer
Watch Dog Timer in “OverStress” Situation
Time−Out Timer
Source Current for CS/ZCD pin impedance Testing
675
750
825
mV
200
250
300
mV
375
500
−
mV
1.4
1.5
1.6
−
−
15.6
−
V
0.5
−
2.0
mA
0.5
−
2.0
mA
−
60
200
ns
−
110
200
ns
80
200
320
ms
400
800 1200
ms
20
30
50
ms
−
250
−
mA
DMIN
ON−TIME CONTROL
Duty Cycle, VFB = 3 V, Vcontrol Pin Open
−
−
0
%
TON(LL)
Maximum On Time, Vsense = 1.4 V and Vcontrol maximum (CrM)
22
25
29
ms
TON(LL)2
On Time, Vsense = 1.4 V and Vcontrol = 2.5 V (CrM)
10.5 12.5 14.0
ms
TON(HL)
Maximum On Time, Vsense = 2.8 V and Vcontrol maximum (CrM)
7.3
8.5
9.6
ms
TON(LL)(MIN) Minimum On Time, Vsense = 1.4 V (not tested, guaranteed by characterization)
−
−
200
ns
TON(HL)(MIN) Minimum On Time, Vsense = 2.8 V (not tested, guaranteed by characterization)
−
−
100
ns
FEED−BACK OVER AND UNDER−VOLTAGE PROTECTIONS (OVP AND UVP)
RsoftOVP
Ratio (Soft OVP Threshold, VFB rising) over VREF (VsoftOVP/VREF) (guaranteed 104
105
106
%
by design)
RsoftOVP(HYST)
RfastOVP2
Ratio (Soft OVP Hysteresis) over VREF (guaranteed by design)
Ratio (Fast OVP Threshold, VFB rising) over VREF (VfastOVP /VREF)
(guaranteed by design)
1.5
2.0
2.5
%
106
107
108
%
RUVP
Ratio (UVP Threshold, VFB rising) over VREF (VUVP/VREF) (guaranteed by
8
12
16
%
design)
RUVP(HYST)
Ratio (UVP Hysteresis) over VREF (guaranteed by design)
(IB)FB
FB Pin Bias Current @ VFB = VOV P and VFB = VUVP
BROWN−OUT PROTECTION AND FEED−FORWARD
−
−
1
%
50
200
450
nA
VBOH
Brown−Out Threshold, Vsense rising
0.96 1.00 1.04
V
VBOL
Brown−Out Threshold, Vsense falling
0.86 0.90 0.94
V
VBO(HYST)
Brown−Out Comparator Hysteresis
60
100
−
mV
TBO(blank)
Brown−Out Blanking Time
35
50
65
ms
4. There is actually a minimum dead−time that is the delay between the core reset detection and the DRV turning on (TZD parameter of the
“Current Sense and Zero Current Detection Blocks” section).
http://onsemi.com
4
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