NCV8440STT3G(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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NCV8440STT3G Datasheet PDF : 8 Pages
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NCV8440
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Features
• Diode Clamp Between Gate and Source
• ESD Protection − HBM 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices
Applications
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
http://onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
95 mW @ 10 V
ID MAX
2.6 A
Drain (Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOT−223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
AYW
F9N05 G
G
1 23
GATE
SOURCE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NCV8440STT1G SOT−223 1000/Tape & Reel
(Pb−Free)
NCV8440STT3G SOT−223 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
December, 2009 − Rev. 5
Publication Order Number:
NCV8440/D
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