NCV8440 데이터 시트보기 (PDF) - ON Semiconductor

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NCV8440

Protected Power MOSFET

ON Semiconductor 

NCV8440, NCV8440A

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage − Continuous

Drain Current

Total Power Dissipation @ TA = 25°C (Note 1)

Operating and Storage Temperature Range

− Continuous @ TA = 25°C

− Single Pulse (tp = 10 ms) (Note 1)

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W)

VDSS

VGS

ID

IDM

PD

TJ, Tstg

EAS

52−59

V

±15

V

2.6

A

10

1.69

W

−55 to 150

°C

110

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)

Thermal Resistance,

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

VLD

RqJA

RqJA

TL

60

V

°C/W

74

169

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2).

2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2).

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

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