NCV8440 데이터 시트보기 (PDF) - ON Semiconductor
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NCV8440 Datasheet PDF : 11 Pages
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NCV8440, NCV8440A
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
VGS = 4.5 V, VDD = 40 V,
ID = 2.6 A, RD = 15.4 W
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RD = 40 W
VGS = 10 V, VDD = 15 V,
ID = 2.6 A, RD = 5.8 W
VGS = 4.5 V, VDS = 40 V,
ID = 2.6 A (Note 3)
Gate Charge
VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
QT
Q1
Q2
375
ns
1525
1530
1160
325
ns
1275
1860
1150
190
ns
710
2220
1180
4.5
nC
0.9
2.6
3.9
nC
1.0
1.7
Forward On−Voltage
IS = 2.6 A, VGS = 0 V (Note 3)
VSD
IS = 2.6 A, VGS = 0 V, TJ = 125°C
0.81
1.5
V
0.66
Reverse Recovery Time
trr
IS = 1.5 A, VGS = 0 V,
dIs/dt = 100 A/ms (Note 3)
ta
tb
Reverse Recovery Stored Charge
QRR
ESD CHARACTERISTICS (Note 4)
730
ns
200
530
6.3
mC
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
5000
V
Machine Model (MM)
500
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
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