NLU1G07 데이터 시트보기 (PDF) - ON Semiconductor
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NLU1G07 Datasheet PDF : 10 Pages
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NLU1G07
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Low−Level Input
Voltage
Conditions
VIL
Low−Level Input
Voltage
VOL
ILKG
IIN
IOFF
ICC
Low−Level
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
Z−State Output
Leakage Current
Input Leakage
Current
Power off Input
Leakage Current
Quiescent Supply
Current
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = VIH, VOUT
= VCC or GND
0 = VIN = 5.5 V
0 v VIN,
VOUT = 5.5 V
0 v VIN v VCC
VCC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0.0
5.5
TA = 25 5C
Min Typ Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0
0.1
0
0.1
0
0.1
0.36
0.36
±0.25
±0.1
0.25
1.0
TA = +855C
Min
Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
TA = −555C
to +1255C
Min Max
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
0.44
0.52
0.44
0.52
±2.5
±5.0
±1.0
±1.0
2.5
5
20
40
Unit
V
V
V
mA
mA
mA
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
VCC
TA = 25 5C
(V)
Test Condition
Min Typ Max
TA = +855C
Min
Max
TA = −555C
to +1255C
Min Max
Unit
tPZL
Output Enable
Time, Input A to
Output Y
3.0 to
3.6
RL = R1 = 50 W,
CL = 15 pF
RL = R1 = 50 W,
CL = 50 pF
5.0 7.1
7.5 10.6
8.5
10.0
ns
12.0
14.5
4.5 to
5.5
RL = R1 = 50 W,
CL = 15 pF
3.8 5.5
6.5
8.0
RL = R1 = 50 W,
CL = 50 pF
5.3 7.5
8.5
10.0
tPLZ
Output Disable
Time
3.0 to
3.6
RL = R1 = 50 W,
CL = 50 pF
7.5 10.6
12.0
14.5
ns
4.5 to
5.5
RL = R1 = 50 W,
CL = 50 pF
5.3 7.5
8.5
10.0
CIN
Input Capacitance
CPD
Power Dissipation
5.0
Capacitance
(Note 6)
4
10
18
10
10.0
pF
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
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