BF1102 데이터 시트보기 (PDF) - Philips Electronics
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BF1102 Datasheet PDF : 16 Pages
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Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
102
handbook, halfpage
yis
(mS)
10
MGS370
1
10−1
10
bis
gis
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.15 Input admittance as a function of frequency;
typical values.
103
handbook, halfpage
yrs
(mS)
102
10
MCD970 −103
ϕrs
(deg)
ϕrs
−102
yrs
−10
1
10
−1
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook1, 0ha2lfpage
|yfs|
(mS)
10
| y f s|
MGS372 102
−ϕfs
(deg)
ϕfs
10
10
handbook, halfpage
yos
(mS)
1
MCD971
bos
1
1
10
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
10−1
10
gos
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.18 Output admittance as a function of
frequency; typical values.
2000 Apr 11
8
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