NTE2312 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

제조사

NTE2312

Silicon NPN Transistor High Voltage, High Speed Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 2)

VCEO(sus) IC = 10mA, IB = 0

ICEV VCEV = 700V, VBE(off) = 1.5V

VCEV = 700V, VBE(off) = 1.5V,

TC = +100°C

IEBO VEB = 9V, Ic = 0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 2A, VCE = 5V

IC = 5A, VCE = 5V

IC = 2A, IB = 0.4A

IC = 5A, IB = 1A

IC = 8A, IB = 2A

IC = 5A, IB = 1A, TC = +100°C

IC = 2A, IB = 0.4A

IC = 5A, IB = 1A

IC = 5A, IB = 1A, TC = +100°C

Current–Gain Bandwidth Product

fT

Output Capacitance

Cob

Switching Characteristics (Resistive Load)

IC = 500mA, VCE = 10V, f = 1MHz

VCB = –10V, IE = 0, f = 0.1MHz

Delay Time

Rise Time

Storage Time

td

VCC = 125V, IC = 5A,

tr

IB1 = IB2 = 1A, tp = 25µs,

Duty Cycle ≤ 1%

ts

Fall Time

tf

Switching Characteristics (Inductive Load), Clamped

Voltage Storage Time

Crossover Time

tsv

IC = 5A, Vclamp = 300V, IB1 = 1A,

tc

VBE(off) = 5V, TC = +100°C

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

Min Typ Max Unit

400 –

–

–

–

–

–

–

–

V

1 mA

5 mA

1 mA

8

– 60

5

– 30

–

–

1

V

–

–

2

V

–

–

3

V

–

–

3

V

–

– 1.2 V

–

– 1.6 V

–

– 1.5 V

4

–

– MHz

– 110 – pF

– 0.05 0.1 µs

– 0.8 1.5 µs

– 1.0 3.0 µs

– 0.15 0.7 µs

– 0.86 2.3 µs

– 0.14 0.7 µs

Share Link: